Hi-Tech Optoelectronics Co., Ltd
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808 nm Wavelength High Power Laser Diode Array for Effective Hair Removal
Description
The vertical arrays specially designed for hair removal application, can stack up to 10 packaged laser bars to form a high power diode laser assembly. Each of these laser bars individually provides up to 100watts in CW mode. The small gaps between the laser bars make the module obtain maximum brilliance from the arrays, enabling the module to work with high efficiency.
808nm diode laser energy density and micro channel cooling ensure an adequate thermal damage to the target tissue without damaging the surrounding tissue to achieve effective hair removal. Laser hair removal is the process of hair removal by means of exposure to pulses of laser light that destroy the hair follicle. Hair removal lasers have been in use since 1997 and have been approved for "permanent hair reduction".
Advantages
Specifications (20℃)
| Diode Laser Arrays for Hair Removal | ||
| Parameters | Unit | LDAQ2-0808-0500 |
| Operation Mode | - | QCW |
| Center Wavelength | nm | 808 ± 10 |
| Output Power | W | 500 |
| Bar Numbers | - | 10 |
| Operating Current | A | ≤50 |
| Operating Voltage | V/bar | ≤2 |
| Pulse Width | ms | ≤400 |
| Duty Cycle | % | ≤40 |
| Bar pitch | mm | 2 |
| Emitting Area | mm×mm | 10×19.5 |
| Operating Temp. | ℃ | 15～35 |
| Storage Temp. | ℃ | -10～50 |
| Flow Rate | L/min | >4 |
Package Information
Function Curve
500W Array
Work Theory
The primary principle behind laser hair removal is selective photothermolysis (SPTL), the matching of a specific wavelength of light and pulse duration to obtain optimal effect on a targeted tissue with minimal effect on surrounding tissue. Lasers can cause localized damage by selectively heating dark target matter, melanin, thereby heating up the basal stem cells in the follicle which causes hair growth, the follicle, while not heating the rest of the skin.
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